Rapidus Prototypes Cutting-Edge 2nm GAA Transistors

Semiconductor Breakthrough at Rapidus Foundry

Rapidus Corporation has successfully prototyped 2nm gate-all-around (GAA) transistors at its Innovative Integration for Manufacturing (IIM-1) facility in Chitose, Hokkaido. Initial electrical characteristics testing confirms the functionality of these advanced semiconductors.

Revolutionary Manufacturing Approach

The achievement demonstrates Rapidus' innovative foundry model featuring two key technologies:

• Single-Wafer Processing: Enables real-time adjustments and AI-driven optimization
• Extreme UV Lithography: Critical for patterning nanoscale transistor structures

Aggressive Development Timeline

Since breaking ground in September 2023, Rapidus has consistently met milestones: cleanroom completion (2024), equipment installation (June 2025), and now functional prototyping. The company installed Japan's first advanced EUV machinery and achieved successful exposures within three months of delivery.

Roadmap to Production

Rapidus will release a Process Development Kit for its 2nm technology in Q1 2026, enabling customer prototyping. Mass production remains on schedule for 2027, positioning Rapidus as a key player in advanced semiconductor manufacturing.