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PortuguêsRapidus achieves 2nm GAA transistor prototyping with confirmed electrical characteristics, marking progress toward 2027 mass production using innovative single-wafer processing and EUV lithography.
Semiconductor Breakthrough at Rapidus Foundry
Rapidus Corporation has successfully prototyped 2nm gate-all-around (GAA) transistors at its Innovative Integration for Manufacturing (IIM-1) facility in Chitose, Hokkaido. Initial electrical characteristics testing confirms the functionality of these advanced semiconductors.
Revolutionary Manufacturing Approach
The achievement demonstrates Rapidus' innovative foundry model featuring two key technologies:
- Single-Wafer Processing: Enables real-time adjustments and AI-driven optimization
- Extreme UV Lithography: Critical for patterning nanoscale transistor structures
Aggressive Development Timeline
Since breaking ground in September 2023, Rapidus has consistently met milestones: cleanroom completion (2024), equipment installation (June 2025), and now functional prototyping. The company installed Japan's first advanced EUV machinery and achieved successful exposures within three months of delivery.
Roadmap to Production
Rapidus will release a Process Development Kit for its 2nm technology in Q1 2026, enabling customer prototyping. Mass production remains on schedule for 2027, positioning Rapidus as a key player in advanced semiconductor manufacturing.
